Data Sheet
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
Schottky Barrier Diode
RB557W
?Applications
?Dimensions (Unit : mm) ?Land size figure (Unit : mm)
General rectification
?Features
1)Ultra small mold type. (EMD3)
2)Low VF
3)High reliability
?Construction
Silicon epitaxial planar
?Structure
?Taping specifications (Unit : mm)
?Absolute maximum ratings (Ta=25°C)
ParameterSymbol
Limits
Unit
Reverse voltage (DC)VR
30
V
Average rectified forward current (*1) 100Io mA
Forward current surge peak (60Hz?1cyc) (*1)IFSM
500
mA
Junction temperature 125Tj °C
Storage temperatureTstg °C?40 to ?125
?Electrical characteristics
(Ta=25°C)
ParameterSymbol Min. Typ. Max. Unit
Forward voltageVF1
- - 0.35 V
IF=10mA
VF2
- - 0.49 V
IF=100mA
Reverse currentIR
--10μAVR=10V
Conditions
(*1) Rating of per diode
EMD3
0.7
0.5
0.5
0.7
0.7
0.6
0.6
1.3
ROHM : EMD3
JEITA : SC-75A
JEDEC : SOT-416
dot (year week factory
(3)
1.6±0.2
1.6±0.2
1.0±0.1
0.8±0.1
0.5
0.5
(2)
(1)
0.15±0.05
0.7±0.1
0.55±0.1
0.1Min
0~0.1
0.2±0.1
  -0.05
0.3±0.1
    0.05
4.0±0.1
2.0±0.05
φ1.55±0.1φ1.5
?0.1
      0?0
3.5±0.05
1.75±0.1
8.0±0.2
φ0.5±0.1
1.8±0.2
0.3±0.1
1.8±0.1
5.5±0.2
0.9±0.2
0~0.1
1/3
2011.04 - Rev.A
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